Study, modeling and optimization of power devices: Application to the control of photovoltaic systems Etude, modélisation et optimisation des dispositifs de puissance : Application à la commande des systèmes photovoltaïques

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dc.contributor.authorZERROUMDA Badreddine
dc.date.accessioned2025-01-15T08:47:23Z
dc.date.available2025-01-15T08:47:23Z
dc.date.issued2024
dc.description.abstractPower semiconductor devices are an important part of the technological revolution of the second half of the 20 th century as they are the basis of the modern conversion of the electric power. Since the last two decades, new market of power devices has evolved in response to the requirements of emerging technologies such as electric vehicles, hybrid electric vehicles, and renewable energies in general. In such areas, demands of increasing reliability and efficiency are continually growing. In order to fulfill those demands, the scientific community is urged to keep advancing in the design, modeling, and optimization of power devices. The work accomplished in this dissertation was established within this framework of design, modeling, and optimization of power devices, where new approaches of power devices design have been developed and exploited successfully. Precisely, a new approach of junctionless (JL) power devices have been proposed and utilized in power MOSFETs. As a result, two novel power MOSFETs designs have been presented, namely a junctionless planar power MOSFET, and a junctionless trench power MOSFET. Those two devices encompasses improvements related to the physics underlying the functioning of power MOSFETs. Numerical modeling and investigation of the combination of the JL concepts with the planar and trench power MOSFETs have been carried out and presented in this dissertation, and improvements regarding the breakdown capability, the on-resistance, the threshold voltage, the switching speed, and the switching losses have been demonstrated in comparison to high-performance recently published power devices. The analysis of the performance of the JL trench power MOSFET on a circuit level analysis based on the boost DC-DC converter mode of operation is performed, and the results proves the superiority of our proposed device in comparison to its conventional counterpart, which discloses a high performance regarding boost mode operation in DC-DC converters for the control of photovoltaic panels.
dc.identifier.urihttps://dspace.univ-batna2.dz/handle/123456789/1835
dc.language.isoen
dc.titleStudy, modeling and optimization of power devices: Application to the control of photovoltaic systems Etude, modélisation et optimisation des dispositifs de puissance : Application à la commande des systèmes photovoltaïques
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