Theoretical investigation of phosphorene for nanoelectronic applications
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Date
2023
Authors
FARAH Seyf El Islam
Journal Title
Journal ISSN
Volume Title
Publisher
University of Batna 2
Abstract
In this work we present a new broadband mid-Infrared (mid-IR) InGaZnO
(IGZO) thin-film phototransistor (TF PT) based on both Black
Phosphorus (BP) capping layer incorporating gold (Au) intermediate ultrathinfilm.
The electronic and optical properties of bulk BP are carried out
using density functional theory (DFT) computations, including Perdew-BurkeErnzerhof
Generalized Gradient Approximation (PBE-GGA) and the screened hybrid (YS-PBE0) functionals with van der Waals correction. It is found that BP exhibits interesting performances for mid-IR optoelectronic applications,
at room temperature. To enhance the absorption of the BP material for
broadband mid-IR spectrum, a new strategy is proposed by optimizing the
sensitive layer using finite-difference time-domain (FDTD) modeling
and particle swarm optimization (PSO) approaches. The photoresponse
properties of the optimized broadband mid-IR IGZO TF PT with BP/Au/BP
capping layer are carefully analyzed. It is found that the proposed device
shows high photodetection performances with a high current ratio exceeding
180 dB over a wide voltage window. Besides, it is revealed that the introduced
ultrathin Au layer within BP enhances the absorbance capability over the midIR
spectrum, which significantly improves the performance of the broadband mid-IR sensor. Therefore, the proposed approach based on combining DFT
analysis with FDTD simulation supported by PSO optimization opens up a
new strategy for the development of high-performance optoelectronic devices.