Theoretical investigation of phosphorene for nanoelectronic applications
| dc.contributor.author | FARAH Seyf El Islam | |
| dc.date.accessioned | 2024-05-15T08:35:51Z | |
| dc.date.available | 2024-05-15T08:35:51Z | |
| dc.date.issued | 2023 | |
| dc.description.abstract | In this work we present a new broadband mid-Infrared (mid-IR) InGaZnO (IGZO) thin-film phototransistor (TF PT) based on both Black Phosphorus (BP) capping layer incorporating gold (Au) intermediate ultrathinfilm. The electronic and optical properties of bulk BP are carried out using density functional theory (DFT) computations, including Perdew-BurkeErnzerhof Generalized Gradient Approximation (PBE-GGA) and the screened hybrid (YS-PBE0) functionals with van der Waals correction. It is found that BP exhibits interesting performances for mid-IR optoelectronic applications, at room temperature. To enhance the absorption of the BP material for broadband mid-IR spectrum, a new strategy is proposed by optimizing the sensitive layer using finite-difference time-domain (FDTD) modeling and particle swarm optimization (PSO) approaches. The photoresponse properties of the optimized broadband mid-IR IGZO TF PT with BP/Au/BP capping layer are carefully analyzed. It is found that the proposed device shows high photodetection performances with a high current ratio exceeding 180 dB over a wide voltage window. Besides, it is revealed that the introduced ultrathin Au layer within BP enhances the absorbance capability over the midIR spectrum, which significantly improves the performance of the broadband mid-IR sensor. Therefore, the proposed approach based on combining DFT analysis with FDTD simulation supported by PSO optimization opens up a new strategy for the development of high-performance optoelectronic devices. | |
| dc.identifier.uri | https://dspace.univ-batna2.dz/handle/123456789/1750 | |
| dc.language.iso | en | |
| dc.publisher | University of Batna 2 | |
| dc.title | Theoretical investigation of phosphorene for nanoelectronic applications |